Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy

被引:5
|
作者
Noda, Takeshi [1 ]
Ishida, Nobuyuki [1 ]
Mano, Takaaki [1 ]
Fujita, Daisuke [1 ]
机构
[1] Natl Inst Mat Sci, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan
关键词
TRANSITIONS;
D O I
10.1063/1.5142438
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report here the direct observation of charge accumulation in GaAs/AlGaAs multiple quantum well (MQW) solar cells by employing cross-sectional Kelvin probe force microscopy (KPFM). This sample is characterized by thin barrier layers that enable miniband formation. The contact potential difference, or potential between the tip and the semiconductor sample, was measured along the p-i-n junction. We observed, under illuminated conditions, a change in the potential gradient, or bending, at a position of the MQW layer, but not in the reference sample without quantum well. This clearly shows that charge is accumulated in the MQW region. We also found that electron accumulation in the MQW layer and the density measured on the surface is about 1x10(11)cm(-2). Our experimental results show that KPFM is a powerful way of understanding the device physics of nanostructure-based solar cells.
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页数:4
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