Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser

被引：64

作者：

Asryan, LV ^{[1
]}

Grundmann, M

Ledentsov, NN

Stier, O

Suris, RA

Bimberg, D

机构：

[1] SUNY Stony Brook, Stony Brook, NY 11794 USA

[2] Tech Univ Berlin, D-10623 Berlin, Germany

[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] Univ Leipzig, D-04103 Leipzig, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 03期

关键词：

D O I：

10.1063/1.1383575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gain and threshold current of a self-assembled InAs/GaAs quantum-dot (QD) laser are simulated. A small overlap integral of the electron and hole wave functions in pyramidal QDs is shown to be a possible reason for the low single-layer modal gain, which limits lasing via the ground-state transition at short (under a millimeter) cavity lengths. (C) 2001 American Institute of Physics.

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页码：1666 / 1668

页数：3

相关论文

共 14 条

[1] GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS [J].

ASADA, M ;

KAMEYAMA, A ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) :745-753

[2] Threshold characteristics of InGaAsP/InP multiple quantum well lasers [J].

Asryan, LV ;

Gun'ko, NA ;

Polkovnikov, AS ;

Zegrya, GG ;

Suris, RA ;

Lau, PK ;

Makino, T .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (12) :1131-1140

[3] Charge neutrality violation in quantum-dot lasers [J].

Asryan, LV ;

Suris, RA .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :148-157

[4] Temperature dependence of the threshold current density of a quantum dot laser [J].

Asryan, LV ;

Suris, RA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (05) :841-850

[5] Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser [J].

Asryan, LV ;

Suris, RA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (04) :554-567

[6] EXPERIMENTAL GAIN CHARACTERISTICS AND BARRIER LASING IN STRAINED-LAYER INGAAS-GAAS-ALGAAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

COLEMAN, JJ ;

BEERNINK, KJ .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (04) :1879-1882

[7] Gain characteristics of InAs/GaAs self-organized quantum-dot lasers [J].

Harris, L ;

Ashmore, AD ;

Mowbray, DJ ;

Skolnick, MS ;

Hopkinson, M ;

Hill, G ;

Clark, J .

APPLIED PHYSICS LETTERS, 1999, 75 (22) :3512-3514

[8] Optical characteristics of 1.24-μm InAs quantum-dot laser diodes [J].

Lester, LF ;

Stintz, A ;

Li, H ;

Newell, TC ;

Pease, EA ;

Fuchs, BA ;

Malloy, KJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) :931-933

[9] Single transverse mode operation of long wavelength (∼1.3μm) InAsGaAs quantum dot laser [J].

Maximov, MV ;

Shernyakov, YM ;

Kaiander, IN ;

Bedarev, DA ;

Kondrat'eva, EY ;

Kop'ev, PS ;

Kovsh, AR ;

Maleev, NA ;

Mikhrin, SS ;

Tsatsul'nikov, AF ;

Ustinov, VM ;

Volovik, BV ;

Zhukov, AE ;

Alferov, ZJ ;

Ledentsov, NN ;

Bimberg, D .

ELECTRONICS LETTERS, 1999, 35 (23) :2038-2039

[10] Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser [J].

Park, G ;

Shchekin, OB ;

Csutak, S ;

Huffaker, DL ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3267-3269