Huge spin-polarization of L21-ordered Co2MnSi epitaxial Heusler alloy film

被引：190

作者：

Sakuraba, Y

Nakata, J

Oogane, M

Kubota, H

Ando, Y

Sakuma, A

Miyazaki, T

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Aoba Ku, Sendai, Miyagi 9808579, Japan

[2] AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 33-36期

关键词：

Heusler alloy; spin-polarization; half-metal; magnetic tunnel junction; tunnel magnetoresistance;

D O I：

10.1143/JJAP.44.L1100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial CO2MnSi/Al-O barrier/poly-crystalline CO75Fe25 were fabricated using an ultrahigh vacuum sputtering system. The epitaxial CO2MnSi bottom electrode exhibited highly ordered L2(1) structure and very smooth surface morphology. Observed magnetoresistance (MR) ratios of 70% at room temperature (RT) and 159% at 2 K are the highest values to date for MTJs using a Heusler alloy electrode. A high spin-polarization of 0.89 at 2 K for CO2MnSi obtained from Julliere's model coincided with the half-metallic band structure that was predicted by theoretical calculations.

引用

收藏

页码：L1100 / L1102

页数：3

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