Surface temperature effects on the dynamics of H- low energy electron stimulated desorption from diamond films

被引:1
作者
Hoffman, A [1 ]
Azria, R
机构
[1] Technion Israel Inst Tech, Inst Solid State, Dept Chem, IL-32000 Haifa, Israel
[2] Technion Israel Inst Tech, Wolfson Ctr Interface Studies, IL-32000 Haifa, Israel
[3] Univ Paris 11, Collis Atom & Mol Lab, F-91405 Orsay, France
关键词
electron stimulated desorption; diamond films; surfaces; hydrogen;
D O I
10.1016/S0168-583X(01)00670-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In this work, we report on the influence of surface temperature on low energy H- electron stimulated desorption (ESD) occurring via dissociative electron attachment (DEA) from hydrogenated diamond films. By measuring the H- kinetic energy distribution (KED) induced by electron bombardment in the 7-18 eV range for surface temperatures ranging between 100 and 450 K we investigate the dynamics of the desorption process. It is determined that the H- ion yield continuously decreases with increasing temperature and that the most probable H- kinetic energy shifts to lower energies. It is proposed that the effect of temperature on the H- KED and consequently on the reduction in ion yield is due to an increase in the energy relaxation cross-section of the anion resonance and energy losses of the outgoing H- ion through interactions with the solid's multi-phonon back.-round and collisions. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:155 / 161
页数:7
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