Molecular beam epitaxy growth of monolayer niobium diselenide flakes

被引：31

作者：

Hotta, Takato ^{[1
]}

Tokuda, Takuto ^{[1
]}

Zhao, Sihan ^{[1
]}

Watanabe, Kenji ^{[2
]}

Taniguchi, Takashi ^{[2
]}

Shinohara, Hisanori ^{[1
]}

Kitaura, Ryo ^{[1
]}

机构：

[1] Nagoya Univ, Dept Chem, Nagoya, Aichi 4648602, Japan

[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 13期

关键词：

BORON-NITRIDE; METAL; SUPERCONDUCTIVITY; GRAPHENE;

D O I：

10.1063/1.4963178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monolayer niobium diselenide (NbSe2) is prepared through molecular beam epitaxy with hexagonal boron nitride (hBN) as substrates. Atomic force microscopy and the Raman spectroscopy have shown that the monolayer NbSe2 grown on the hBN possesses triangular or truncated triangular shape whose lateral size amounts up to several hundreds of nanometers. We have found that the precisely controlled supply rate and ultraflat surface of hBN plays an important role in the growth of the monolayer NbSe2. Published by AIP Publishing.

引用

页数：4

共 28 条

[1] Growth Mechanism of Transition Metal Dichalcogenide Monolayers: The Role of Self-Seeding Fullerene Nuclei [J].

Cain, Jeffrey D. ;

Shi, Fengyuan ;

Wu, Jinsong ;

Dravid, Vinayak P. .

ACS NANO, 2016, 10 (05) :5440-5445

[2] Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere [J].

Cao, Y. ;

Mishchenko, A. ;

Yu, G. L. ;

Khestanova, E. ;

Rooney, A. P. ;

Prestat, E. ;

Kretinin, A. V. ;

Blake, P. ;

Shalom, M. B. ;

Woods, C. ;

Chapman, J. ;

Balakrishnan, G. ;

Grigorieva, I. V. ;

Novoselov, K. S. ;

Piot, B. A. ;

Potemski, M. ;

Watanabe, K. ;

Taniguchi, T. ;

Haigh, S. J. ;

Geim, A. K. ;

Gorbachev, R. V. .

NANO LETTERS, 2015, 15 (08) :4914-4921

[3] Crack propagation thresholds: A measure of surface energy [J].

Cook, Robert F. .

JOURNAL OF MATERIALS RESEARCH, 1986, 1 (06) :852-860

[4] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[5] Large-scale synthesis of NbS2 nanosheets with controlled orientation on graphene by ambient pressure CVD [J].

Ge, Wanyin ;

Kawahara, Kenji ;

Tsuji, Masaharu ;

Ago, Hiroki .

NANOSCALE, 2013, 5 (13) :5773-5778

[6] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[7] Fermi-surface nesting and the origin of the charge-density wave in NbSe2 [J].

Johannes, MD ;

Mazin, II ;

Howells, CA .

PHYSICAL REVIEW B, 2006, 73 (20)

[8] Chemical Vapor Deposition Growth of Graphene and Related Materials [J].

Kitaura, Ryo ;

Miyata, Yasumitsu ;

Xiang, Rong ;

Hone, James ;

Kong, Jing ;

Ruoff, Rodney S. ;

Maruyama, Shigeo .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2015, 84 (12)

[9]

Koma A., 1984, Microelectronic Engineering, V2, P129, DOI 10.1016/0167-9317(84)90057-1

[10] Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility [J].

Liu, Han ;

Neal, Adam T. ;

Zhu, Zhen ;

Luo, Zhe ;

Xu, Xianfan ;

Tomanek, David ;

Ye, Peide D. .

ACS NANO, 2014, 8 (04) :4033-4041

← 1 2 3 →