COMPUTER SIMULATION OF CHARGING THE SILICON DIOXIDE SURFACE AND SUBSURFACE LAYERS BY ELECTRON BOMBARDMENT

被引：1

作者：

Kortov, V. S. ^{[1
]}

Zvonarev, S. V. ^{[1
]}

Spiridonova, T. V. ^{[1
]}

机构：

[1] Ural State Tech Univ, Ekaterinburg, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2011年 / 54卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

computer simulation; surface charging; electron bombardment; SEMICONDUCTORS;

D O I：

10.1007/s11182-011-9613-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A physical model and program of calculating the parameters of charging dielectrics by electron bombardment is described. A method of computer simulation is used to investigate the main processes of charging the subsurface silicon dioxide layers. Dependences of the current density, volume charge density, and electric field strength on the material layer depth are calculated for variable electron beam parameters, irradiation time, and grid potential near the sample surface.

引用

页码：288 / 295

页数：8

共 9 条

[1] ELECTRON-HOLE-PAIR CREATION ENERGIES IN SEMICONDUCTORS [J].