CMOS microsystems temperature control

被引：14

作者：

Falconi, Christian ^{[1
]}

Fratini, Marco ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2008年 / 129卷 / 01期

关键词：

temperature control; electronic interfaces; CMOS microsystems; PTAT sensors; thermal Sigma Delta modulation;

D O I：

10.1016/j.snb.2007.07.071

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Here we describe a high-accuracy, high-precision interface for the temperature control of a microsystem which contains a bipolar junction transistor for temperature sensing; the desired temperature is set by a digital word and the interface may be integrated in standard CMOS processes. Transistor level simulations of the complete electro-thermal microsystem show that, after a single temperature calibration, the temperature control error may be kept below +/-0.1 degrees C in the temperature range (0 degrees C-102.4 degrees C). (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：59 / 66

页数：8

共 16 条

[11]

LOCASTRO F, 2004, P EUR TEMP CONTR SYS

[12]

Pertijs M.A.P., 2005, Ph.D. Thesis

[13] Precision temperature measurement using CMOS substrate PNP transistors [J].

Pertijs, MAP ;

Meijer, GCM ;

Huijsing, JH .

IEEE SENSORS JOURNAL, 2004, 4 (03) :294-300

[14] A 1.1-V current-mode and piecewise-linear curvature-corrected bandgap reference [J].

Rincon-Mora, GA ;

Allen, PE .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (10) :1551-1554

[15]

VANOUDHEUSDEN BW, 1994, THERMAL FLOW SENSORS

[16]

VERHOEVEN HJ, 1995, THESIS DELFT U TECHN

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