Sol ageing effect on the structural, optical and electrical properties of Ga-doped ZnO thin films

被引:0
作者
Serrao, Felcy Jyothi [2 ]
Dharmaprakash, S. M. [1 ]
机构
[1] Mangalore Univ, Dept Studies Phys, Mangalagangothri 574199, Karnataka, India
[2] Karnataka Govt Res Ctr SCEM, Dept Phys, Mangalore 575007, India
关键词
Gallium-doped zinc oxide; Sol-gel method; Thin films; Sol ageing time; Optical properties; Electrical properties; ZINC-OXIDE; THICKNESS; TEMPERATURE; AL; DEPOSITION;
D O I
10.1080/10667857.2015.1105576
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Gallium-doped zinc oxide thin films (GZO) were grown on a glass substrate by a simple sol-gel process and spin coating technique. The effects of sol ageing time on the structural, optical and electrical properties of the GZO films were investigated. Experimental results showed that the microstructure, optical transmittance and electrical resistivity of the GZO films depend directly on the sol ageing time. XRD studies revealed the polycrystalline nature of the films with the c-axis grain orientation. Optical transmittance of the films was higher than about 82% within the visible region and the optical direct band gap was increased with increasing sol ageing time. A minimum resistivity of 3.16 x 10(-5) Omega m was observed in the film deposited by a sol aged for 48 h. These results indicate that an appropriate ageing time of the sol is important for the improvement of the properties of GZO films derived from sol-gel method.
引用
收藏
页码:443 / 447
页数:5
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