Characterization of screen printed and fire-through contacts on LPCVD based passivating contacts in monoPoly™ solar cells

被引：30

作者：

Padhamnath, Pradeep ^{[1
,2
]}

Buatis, Jammaal Kitz ^{[1
]}

Khanna, Ankit ^{[1
]}

Nampalli, Nitin ^{[1
]}

Nandakumar, Naomi ^{[1
]}

Shanmugam, Vinodh ^{[1
]}

Aberle, Armin G. ^{[1
,2
]}

Duttagupta, Shubham ^{[1
]}

机构：

[1] NUS, Solar Energy Res Inst Singapore, 6-01 Blk E3A,7 Engn Dr 1, Singapore 117574, Singapore

[2] Natl Univ Singapore, Dept ECE, 5-42 Blk E4,4 Engn Dr 3, Singapore 117583, Singapore

来源：

SOLAR ENERGY | 2020年 / 202卷

基金：

新加坡国家研究基金会;

关键词：

Metallization; Screen printing; Recombination; Passivation; Passivating contacts; Polysilicon; RECOMBINATION LOSSES; SI; QUALITY;

D O I：

10.1016/j.solener.2020.03.087

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work we have characterized screen-printed passivating contacts formed by different commercially available fire-through pastes on phosphorus doped (n(+)) polysilicon (poly-Si) layers at the rear side of monoPoly (TM) solar cells. Extremely low recombination current density under metal contacts (J(01,metal)) of 35-45 fA/cm(2) and excellent specific contact resistivity (rho(c)) values of similar to 1.3 m Omega-cm(2) are obtained for two different thicknesses of poly-Si (150 nm and 250 nm) used in this work. We demonstrate that, although the metal induced recombination increases with reducing thickness of the poly-Si layer, thinner poly-Si layers can lead to higher efficiencies on account of reduced parasitic absorption leading to higher cell current. A champion efficiency of 22.6% is reported for busbarless monoPoly (TM) cells with the best performing fire-through (FT) paste on large area (244.3 cm(2)) commercially available Czochralski grown Si wafers.

引用

页码：73 / 79

页数：7

共 38 条

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