Growth and properties of wide bandgap (MgSe)n(ZnxCd1-xSe)m short-period superlattices

被引：0
|
作者：
Garcia, Thor A.
Tamargo, Maria C. [1 ]
机构：
[1] CUNY, City Coll New York, Dept Chem, New York, NY 10031 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2017年 / 480卷
基金：
美国国家科学基金会;
关键词：
Superlattices; Molecular beam epitaxy; Nanomaterials; Semiconducting II-VI materials;
D O I：
10.1016/j.jcrysgro.2017.09.011
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the molecular beam epitaxy (MBE) growth and properties of (MgSe)(n)(ZnxCd(1-x) Se)(m) short-period superlattices(SPSLs) for potential application in II-VI devices grown on InP substrates. SPSL structures up to 1 mu m thick with effective bandgaps ranging from 2.6 eV to above 3.42 eV are grown and characterized, extending the typical range possible for the Zn(x)Cdy(M)g(1-x-y)Se random alloy beyond 3.2 eV. Additionally, ZnxCd1-xSe single and multiple quantum well structures using the SPSL barriers are also grown and investigated. The structures are characterized utilizing reflection high-energy electron diffraction, X-ray reflectance, X-ray diffraction and photoluminescence. We observed layer-by-layer growth and smoother interfaces in the QWs grown with SPSL when compared to the ZnxCdyMg1-x-ySe random alloy. The results indicate that this materials platform is a good candidate to replace the random alloy in wide bandgap device applications. Published by Elsevier B.V.
引用
收藏
页码：74 / 77
页数：4
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