Structural, morphological, dielectric and magnetic properties of Zn-Zr co-doping yttrium iron garnet

被引:15
作者
Caol, Hechun [1 ]
Zheng, Hui [1 ]
Fan, Lining [1 ]
Cheng, Zifeng [1 ]
Zhou, Jianwei [1 ]
Wu, Qiong [2 ]
Zheng, Peng [1 ]
Zheng, Liang [1 ]
Zhang, Yang [1 ]
机构
[1] Hangzhou Dianzi Univ, Dept Elect Sci & Technol, Lab Nanoelect & NanoDevices, Hangzhou, Peoples R China
[2] China Jiliang Univ, Magnetism Key Lab Zhejiang Prov, Hangzhou, Peoples R China
基金
中国国家自然科学基金;
关键词
dielectric materials/properties; magnetic materials/properties; microstructure; CRYSTALLOGRAPHIC PROPERTIES; FERRITE; MICROSTRUCTURE; PERMITTIVITY; PERMEABILITY; CERAMICS; ALUMINUM; FILMS; DENSE; GD;
D O I
10.1111/ijac.13335
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, yttrium iron garnet co-doped with Zn and Zr atoms with a chemical formula Y3ZnxZrxFe(5-2x)O12 (x = 0.0-0.3) has been successfully prepared by the solid-state reaction method. The effects of doping concentration on the microstructure, crystal structure, magnetic properties, and dielectric properties of Y3ZnxZrxFe(5-2x)O12 were investigated. The microstructure analysis indicates that co-doping of YIG with Zn and Zr can effectively reduce the grain size of the ceramic. The crystal structure results reveal that the doping concentration of Zn-Zr has substantial influence on the lattice parameters of YIG, such as, increases the lattice constant, crystal cell size, and interplanar spacing. However, the second phase of ZrO2 appears once x >= 0.15. Additionally, the dielectric properties of YIG ferrite can be regulated using this Zn-Zr co-doping method. Zn-Zr co-doping can improve the dielectric stability and reduce the dielectric loss at high temperature. The magnetization measurement shows that the saturation magnetization is stabilized at x < 0.15, and the magnetic loss is decreased with the increase in the doping concentration. Overall, the findings show that the ceramic with x = 0.1 exhibits better properties included high saturation magnetization (24.607 emu/g), low magnetic loss (0.0025 @ 1 MHz), and relatively low dielectric loss (496 @ 400 degrees C).
引用
收藏
页码:812 / 821
页数:10
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