Low dark current GaN schottky UV photodiodes using oxidised IrNi schottky contact

被引：7

作者：

Jiang, H ^{[1
]}

Egawa, T

Ishikawa, H

Dou, YB

Shao, CL

Jimbo, T

机构：

[1] Nagoya Inst Technol, Res Ctr Nanodevices & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 22期

关键词：

D O I：

10.1049/el:20031039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ir/Ni/Ir metallisation was employed as Schottky contacts of GaN Schottky photodiodes. After annealing at 500degreesC in O-2 for 1 min, the Schottky contact achieved the maximum barrier height of 1.28 eV and the minimum dark current densities of 1.8 x 10(-10) A/cm(2) at -5 V bias. The peak responsivity is 105 mA/W at zero bias and increases to 150mA/W at -15V bias. The detectivity was estimated as 5.8 x 10(15) cmHz(1/2) W-1 at zero bias.

引用

页码：1604 / 1606

页数：3

共 5 条

[1] High-speed visible-blind GaN-based indium-tin-oxide Schottky photodiodes [J].

Biyikli, N ;

Kartaloglu, T ;

Aytur, O ;

Kimukin, I ;

Ozbay, E .

APPLIED PHYSICS LETTERS, 2001, 79 (17) :2838-2840

[2] SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE - A SIMPLE METHOD OF DETERMINING THE BARRIER HEIGHTS [J].

BRUTSCHER, N ;

HOHEISEL, M .

SOLID-STATE ELECTRONICS, 1988, 31 (01) :87-89

[3] Schottky barrier detectors on GaN for visible-blind ultraviolet detection [J].

Chen, Q ;

Yang, JW ;

Osinsky, A ;

Gangopadhyay, S ;

Lim, B ;

Anwar, MZ ;

Khan, MA ;

Kuksenkov, D ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2277-2279

[4] Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes [J].

Collins, CJ ;

Li, T ;

Lambert, DJH ;

Wong, MM ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 2000, 77 (18) :2810-2812

[5] Transparent ohmic contacts of oxidized Ru and Ir on p-type GaN [J].

Jang, HW ;

Lee, JL .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :5416-5421

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