Fourfold symmetric planar Hall effect in epitaxial La1-xSrxCoO3 thin films

被引：5

作者：

Cui, W. Y. ^{[1
]}

Li, P. ^{[1
]}

Bai, H. L. ^{[1
]}

机构：

[1] Tianjin Univ, Inst Adv Mat Phys, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 13期

关键词：

Hall effect - Strontium compounds - Strontium - Magnetic anisotropy - Semiconductor doping - Thin films;

D O I：

10.1063/1.4917055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Sr concentration on the planar Hall effect (PHE) in epitaxial magnetic phase separated La1-xSrxCoO3 (0.07 <= x <= 0.60) thin films was studied systematically. It was found that crystalline anisotropy and spin-orbital coupling are the main contributions to the unexpected fourfold symmetric PHE. The uniaxial anisotropy field was given by H-uni = 70 Oe and cubic anisotropic field H-cub = 143 Oe, respectively. The magnetic anisotropy was weakened by Sr doping, which corresponds with the disappearance of the fourfold symmetry in PHE with the increasing Sr concentration. The first principle calculations proved that the contribution of Co-d orbitals to the magnetic anisotropy strongly depends on the Sr concentration. e(g) - d(x2) (- y2) and e(g) - d(3z2 - r2) orbitals play a dominant role in the magnetic anisotropy of the samples with x = 0.125, 0.25, while the t(2g) - d(xy); d(yz), d(xz) orbitals contribute mainly to the magnetic anisotropy of the samples with x = 0.375, 0.5, 0.625. (C) 2015 AIP Publishing LLC.

引用

页数：6

共 20 条

[1] Fourfold oscillation in anisotropic magnetoresistance and planar Hall effect at the LaAlO3/SrTiO3 heterointerfaces: Effect of carrier confinement and electric field on magnetic interactions [J].

Annadi, A. ;

Huang, Z. ;

Gopinadhan, K. ;

Wang, X. Renshaw ;

Srivastava, A. ;

Liu, Z. Q. ;

Ma, H. Harsan ;

Sarkar, T. P. ;

Venkatesan, T. ;

Ariando .

PHYSICAL REVIEW B, 2013, 87 (20)

[2] Magnetoresistance tensor of La0.8Sr0.2MnO3 [J].

Bason, Y. ;

Hoffman, J. ;

Ahn, C. H. ;

Klein, L. .

PHYSICAL REVIEW B, 2009, 79 (09)

[3] Enhanced magnetization in epitaxial SrRuO3 thin films via substrate-induced strain [J].

Grutter, Alexander ;

Wong, Franklin ;

Arenholz, Elke ;

Liberati, Marco ;

Suzuki, Yuri .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (09) :26

[4] Low-temperature anisotropic magnetoresistance and planar Hall effect in SrRuO3 [J].

Haham, Noam ;

Shperber, Yishai ;

Reiner, James W. ;

Klein, Lior .

PHYSICAL REVIEW B, 2013, 87 (14)

[5] Origin of the twofold and fourfold symmetric anisotropic magnetoresistance in epitaxial Fe3O4 films [J].

Li, P. ;

Jin, C. ;

Jiang, E. Y. ;

Bai, H. L. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (09)

[6] Fourfold symmetric anisotropic magnetoresistance based on magnetocrystalline anisotropy and antiphase boundaries in reactive sputtered epitaxial Fe3O4 films [J].

Li, P. ;

Jiang, E. Y. ;

Bai, H. L. .

APPLIED PHYSICS LETTERS, 2010, 96 (09)

[7] ANISOTROPIC MAGNETORESISTANCE IN FERROMAGNETIC 3D ALLOYS [J].

MCGUIRE, TR ;

POTTER, RI .

IEEE TRANSACTIONS ON MAGNETICS, 1975, 11 (04) :1018-1038

[8] Field-dependent anisotropic magnetoresistance and planar Hall effect in epitaxial magnetite thin films [J].

Naftalis, N. ;

Kaplan, A. ;

Schultz, M. ;

Vaz, C. A. F. ;

Moyer, J. A. ;

Ahn, C. H. ;

Klein, L. .

PHYSICAL REVIEW B, 2011, 84 (09)

[9] Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La0.7Ca0.3MnO3 [J].

Naftalis, N. ;

Bason, Y. ;

Hoffman, J. ;

Hong, X. ;

Ahn, C. H. ;

Klein, L. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)

[10] Out of plane anisotropic magnetoresistance and planar Hall effect in epitaxial film of La0.8Sr0.2MnO3 [J].

Naftalis, Netanel ;

Haham, Noam ;

Hoffman, Jason ;

Marshall, Matthew S. J. ;

Ahn, C. H. ;

Klein, L. .

JOURNAL OF APPLIED PHYSICS, 2014, 115 (05)

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