Auger coefficients in type-II InAs/Ga1-xInxSb quantum wells

被引：130

作者：

Meyer, JR ^{[1
]}

Felix, CL

Bewley, WW

Vurgaftman, I

Aifer, EH

Olafsen, LJ

Lindle, JR

Hoffman, CA

Yang, MJ

Bennett, BR

Shanabrook, BV

Lee, H

Lin, CH

Pei, SS

Miles, RH

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Sarnoff Corp, Princeton, NJ 08543 USA

[3] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA

[4] Hughes Res Labs, Malibu, CA 90265 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 20期

关键词：

D O I：

10.1063/1.122609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells. For energy gaps corresponding to 3.1-4.8 mu m, the room-temperature Auger coefficients for seven different samples are found to be nearly an order-of-magnitude lower than typical type-I results for the same wavelength. The data imply that at this temperature, the Auger rate is relatively insensitive to details of the band structure. (C) 1998 American Institute of Physics. [S0003-6951(98)00746-3].

引用

页码：2857 / 2859

页数：3

共 34 条

[1] MINORITY-CARRIER LIFETIME IN LPE HG1-XCDX TE [J].