UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays

被引：30
|
作者：
Lausecker, E. [1 ]
Brehm, M. [1 ]
Grydlik, M. [1 ]
Hackl, F. [1 ]
Bergmair, I. [2 ]
Muehlberger, M. [2 ]
Fromherz, T. [1 ]
Schaeffler, F. [1 ]
Bauer, G. [1 ]
机构：
[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria
[2] Profactor GmbH, Funct Surfaces & Nanostruct, A-4407 Steyr Gleink, Austria
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 14期
关键词：
ASSEMBLED GE ISLANDS; QUANTUM-WELLS; DOTS; SI; PHOTOLUMINESCENCE; NANOSTRUCTURES; ALIGNMENT; SI(001); GROWTH;
D O I：
10.1063/1.3575554
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We use UV nanoimprint lithography for the pit-patterning of silicon substrates. Ordered silicon-germanium islands are grown inside these pits by molecular-beam epitaxy on arrays of 3 x 3 mm(2) and characterized by atomic force microscopy (AFM) and photoluminescence (PL) measurements. AFM-based statistics reveals an extremely uniform size distribution of the islands in the patterned areas. These results are confirmed by very narrow and uniform PL peaks recorded at various positions across the patterned arrays. (C) 2011 American Institute of Physics. [doi:10.1063/1.3575554]
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页数：3
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