Diode-end-pumped Tm, Ho:YVO4 microchip laser at room temperature

被引：8

作者：

Yao, B. Q. ^{[1
]}

Chen, F. ^{[1
]}

Wu, C. T. ^{[1
]}

Wang, Q. ^{[1
]}

Li, G. ^{[1
]}

Zhang, C. H. ^{[1
]}

Wang, Y. Z. ^{[1
]}

Ju, Y. L. ^{[1
]}

机构：

[1] Harbin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150001, Peoples R China

来源：

LASER PHYSICS | 2011年 / 21卷 / 04期

关键词：

Q-SWITCH OPERATION; CONTINUOUS-WAVE; CONVERSION; CRYSTALS; TM-YVO4; POWER; NM;

D O I：

10.1134/S1054660X11070346

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Room temperature Tm, Ho:YVO4 microchip laser operated around 2 mu m was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M (2) factor was measured to be 1.4.

引用

页码：663 / 666

页数：4

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