Characterization of bolometers based on polycrystalline silicon germanium alloys

被引：33

作者：

Sedky, S ^{[1
]}

Fiorini, P ^{[1
]}

Caymax, M ^{[1
]}

Baert, C ^{[1
]}

Hermans, L ^{[1
]}

Mertens, R ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 10期

关键词：

bolometers; infrared; poly SiGe; responsivity;

D O I：

10.1109/55.720191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on the first realization and characterization of uncooled Infra Red (IR) bolometers, based on polycrystalline alloys of silicon and germanium (poly SiGe), Responsivity, thermal conductance, thermal time constant and noise will be analyzed. It sill be shown that poly SiGe provides high thermal insulation. An average detectivity of 10(8) cm root Hz/W has been measured. We expect that modifications in the device structure could allow to achieve detectivities of 10(9) cm root Hz/W.

引用

页码：376 / 378

页数：3

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