Investigation on diamond damaged process during a single-scratch of single crystal silicon carbide

被引：21

作者：

Duan, Nian ^{[1
]}

Yu, Yiqing ^{[1
]}

Shi, Weibin ^{[1
]}

Xiao, Qi ^{[1
]}

Liu, Qing ^{[2
]}

机构：

[1] Huaqiao Univ, Coll Mech Engn & Automat, Xiamen 361021, Fujian, Peoples R China

[2] Huaqiao Univ, Inst Mfg Engn, Xiamen 361021, Fujian, Peoples R China

来源：

WEAR | 2021年 / 486卷

关键词：

Single-scratch; Single crystal SiC; Diamond grit; Damaged process; Material removal; ANISOTROPY; DEFORMATION;

D O I：

10.1016/j.wear.2021.204099

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

Through a series of single-scratch experiments, the damaged process of diamond grit and the material removal mechanism of single crystal silicon carbide (SiC) were investigated. The 111 110 planes of single diamond grits were used to scratch the carbon (C) face and silicon (Si) face of single crystal SiC, respectively. The damaged process and corresponding typical damaged morphology of diamond grits on different planes were analyzed. The material removal mechanism of single crystal SiC (C face and Si face) is analyzed. The results show that the contact width and the breaking angle were determined as the key damaged parameters of diamond grit by the analysis of the damaged process. However, the key factor to reduce surface damage is the state of the micro-edges that appear on the crystal plane of the diamond grit in contact with the workpiece during the scratching process.

引用

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