Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

被引：9

作者：

Gokce, B. ^{[1
]}

Aspnes, D. E. ^{[1
]}

Lucovsky, G. ^{[1
]}

Gundogdu, K. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 02期

关键词：

PHOSPHORUS-DOPED SILICON; INITIAL OXIDATION; SURFACES; SPECTROSCOPY; INTERFACES; SI(001); OXYGEN; FILMS;

D O I：

10.1063/1.3537809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si-Si back bonds relative to the Si-H up bonds. However, the thicknesses of the natural oxides of all samples stabilize near 1 nm at room temperature, regardless of the chemical kinetics of the different bonds. (C) 2011 American Institute of Physics. [doi:10.1063/1.3537809]

引用

页数：3

共 18 条

[1] Application of the anisotropic bond model to second-harmonic generation from amorphous media
Adles, E. J.
Aspnes, D. E.
[J]. PHYSICAL REVIEW B, 2008, 77 (16):
[2] HIGH PRECISION SCANNING ELLIPSOMETER
ASPNES, DE
STUDNA, AA
[J]. APPLIED OPTICS, 1975, 14 (01): : 220 - 228
[3] First sharp diffraction peak in silicate glasses: Structure and scattering length dependence
Du, JC
Corrales, R
[J]. PHYSICAL REVIEW B, 2005, 72 (09)
[4] HEAVY-DOPING EFFECTS AND IMPURITY SEGREGATION DURING HIGH-PRESSURE OXIDATION OF SILICON
FUOSS, D
TOPICH, JA
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 275 - 277
[5] Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si
Gokce, Bilal
Adles, Eric J.
Aspnes, David E.
Gundogdu, Kenan
[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2010, 107 (41) : 17503 - 17508
[6] Doping dependence of second harmonic generation from native oxide/Si(111) interfaces
Hirayama, H
Watanabe, K
Kawada, M
[J]. APPLIED SURFACE SCIENCE, 1996, 100 : 460 - 464
[7] IRENE EA, 1978, J ELECTROCHEM SOC, V125, pC352
[8] Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma
Kakiuchi, Hiroaki
Ohmi, Hiromasa
Harada, Makoto
Watanabe, Heiji
Yasutake, Kiyoshi
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (09)
[9] Initial oxidation phenomena of heavily phosphorus-doped silicon in dry oxygen
Kamiura, Y
Hasegawa, K
Sano, Y
Mizokawa, Y
Kawamoto, K
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06): : 2187 - 2191
[10] EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAM
LIGENZA, JR
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (11) : 2011 - &

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