The microstructure, insulating and dielectric characteristics of Na0.5Bi0.5TiO3 thin films: role of precursor solution

被引：3
作者：
Han, Y. J. [1 ]
Huang, S. F. [2 ]
Yang, C. H. [1 ,2 ]
Lin, X. J. [2 ]
Wang, Y. C. [2 ]
Song, J. H. [1 ]
Qian, J. [1 ]
机构：
[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Shandong, Peoples R China
[2] Univ Jinan, Shandong Prov Key Lab Preparat & Measurement Bldg, Jinan 250022, Shandong, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 23期
基金：
中国国家自然科学基金;
关键词：
CHEMICAL SOLUTION DEPOSITION; ELECTRICAL-PROPERTIES; BIFEO3; FILMS; ANNEALING TEMPERATURE;
D O I：
10.1007/s10854-017-7749-x
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Na0.5Bi0.5TiO3 (NBT) thin films were fabricated on the indium tin oxide/glass substrates via a chemical solution deposition method by using different precursor solutions. Results show that the precursor solution has a remarkable influence on the crystallinity, morphology, insulating and dielectric properties of NBT thin films. Especially, the NBT thin film annealed at 500 degrees C from the precursor solution with acetates dissolved in 2-methoxyethanol and acetic acid shows optimal electrical properties, reflected by the reduced leakage current density, the maximum tunability of 23%, a high dielectric constant of 207 and a low dielectric loss of 0.05 as well as a large figure of merit of 4.6 at 100 kHz.
引用
收藏
页码：18057 / 18063
页数：7
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