Hot-wire chemical vapor deposition epitaxy on polycrystalline silicon seeds on glass

被引：0

作者：

Teplin, Charles W. ^{[1
]}

Branz, Howard M. ^{[1
]}

Jones, Kim M. ^{[1
]}

Romero, Manuel J. ^{[1
]}

Stradins, Paul ^{[1
]}

Gall, Stefan ^{[2
]}

机构：

[1] NREL, NCPV, 1617 Cole Blvd, Golden, CO 80401 USA

[2] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007 | 2007年 / 989卷

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D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

During the last few years, hot-wire chemical vapor deposition (HWCVD) has been explored as a low-temperature process for epitaxially thickening c-Si seeds layers on low cost substrates. Here, we demonstrate HWCVD epitaxy on thin polycrystalline silicon seed layers on borosilicate glass substrates. The crystal Si seeds are large-grained (similar to 10 mu m) polycrystalline silicon that were fabricated by Al-induced crystallization of a-Si. We report the growth of 0.5 mu m of epitaxy at similar to 670 degrees C.

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页码：133 / +

页数：3

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