Modeling of ambipolar charge transport in all-organic ferroelectric field-effect transistor

A model describing charge transport in disordered ambipolar all-organic-ferroelectric field-effect transistors (AoFeFETs) is proposed by examining the interaction between semiconductor charge and ferroelectric polarization. A density dependent variable-range hopping charge transport in ambipolar organic semiconductors and an analytical ferroelectric-polarization Miller-Lue expression were adopted in this model. An effective potential comprising the threshold voltage and channel potential V-ch, has been used to consider the possible effects due to the nonuniform field distribution along the device-channel. The results show it can be used to model the transfer and output characteristic in AoFeFETs via a single formulation. An excellent agreement between theory and experiment is observed over a wide range of biasing regimes.