Semi-insulating GaAs as a relaxation semiconductor

It is shown that semi-insulating GaAs diodes exhibit all the qualitative electrical properties expected from a relaxation semiconductor. The degree of ideality increases after irradiation by neutrons for liquid encapsulated Czochralski and liquid phase epitaxy (LPE) material although LPE material is almost lifetimelike directly from manufacture. Experimental results are shown for current-voltage and capacitance-voltage frequency over a range of temperatures for samples in the low- and high-space charge limit conditions. The implications for commercial GaAs and other compound semiconductor devices are discussed. (C) 1998 American Institute of Physics.