Characterization of scintillation properties of Nd-doped Bi4Ge3O12 single crystals with near-infrared luminescence

被引：22
|
作者：
Okazaki, Kai [1 ]
Onoda, Daichi [1 ]
Fukushima, Hiroyuki [1 ]
Nakauchi, Daisuke [1 ]
Kato, Takumi [1 ]
Kawaguchi, Noriaki [1 ]
Yanagida, Takayuki [1 ]
机构：
[1] Nara Inst Sci & Technol NAIST, Div Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2021年 / 32卷 / 16期
关键词：
PHOTODYNAMIC THERAPY; NIR; PHOTODETECTOR; BGO; RADIATION; PRODRUG;
D O I：
10.1007/s10854-021-06686-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We synthesized the Nd-doped Bi4Ge3O12 (BGO) single crystals with different concentrations of Nd (0.1, 0.5, and 1%) by the floating zone method and evaluated the photoluminescence (PL) and scintillation properties. In both the PL and scintillation spectra, intrinsic luminescence of BGO was observed at 400-600 nm. In addition, emission peaks due to the 4f-4f transitions of Nd3+ were observed in the near-infrared range. The 0.5% Nd-doped sample indicated the highest quantum yield of 42.9% among the samples. All the samples showed good linearity between X-ray exposure dose rate and the emission intensity in the NIR range. The lowest detectable dose rates were 0.06 Gy/h in the 0.1 and 1% Nd-doped BGO samples, and that of the 0.5% Nd-doped BGO sample was 0.01 Gy/h.
引用
收藏
页码：21677 / 21684
页数：8
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