A low-noise, single-photon avalanche diode in standard 0.13 μm complementary metal-oxide-semiconductor process

被引：37

作者：

Field, Ryan M. ^{[1
]}

Lary, Jenifer ^{[2
]}

Cohn, John ^{[2
]}

Paninski, Liam ^{[3
]}

Shepard, Kenneth L. ^{[1
]}

机构：

[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[2] IBM STG, Essex Jct, VT 05452 USA

[3] Columbia Univ, Dept Stat, New York, NY 10027 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 21期

基金：

美国国家卫生研究院; 美国国家科学基金会;

关键词：

ENERGY-TRANSFER; TECHNOLOGY;

D O I：

10.1063/1.3518473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the design and characterization of a single-photon avalanche diode (SPAD) fabricated with a standard 0.13 mu m complementary metal-oxide-semiconductor process. We have developed a figure of merit for SPADs when these detectors are employed in high frame-rate fluorescent lifetime imaging microscopy, which allows us to specify an optimal bias point for the diode and compare our diode with other published devices. At its optimum bias point at room temperature, our SPAD achieves a photon detection probability of 29% while exhibiting a dark count rate of only 231 Hz and an impulse response of 198 ps. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3518473]

引用

页数：3

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