Silicon-film thickness dependence of static characteristics of high-voltage MOSFET in thin-film SOI

被引：0

作者：

Zheng, TL ^{[1
]}

Luo, JS ^{[1
]}

机构：

[1] Xian Jiao Tong Univ, Inst Microelect, Xian 710049, Peoples R China

来源：

CHINESE JOURNAL OF ELECTRONICS | 2000年 / 9卷 / 04期

关键词：

high-voltage; thin-film; SOI; MOSFET; device simulation; thermal analysis;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature rise of high-voltage MOSFET in thin SOI (silicon on insulator) is found negligible with self-heating effects analyzed. The influence of the thickness of SOI within the range of 0.05 similar to 1 mum upon the devices' static characteristics is investigated with a 2-dimensional simulator. The optimised thickness of SOI is given concerning the threshold voltage, on-resistance and transconductance of the device.

引用

页码：380 / 383

页数：4

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