Cu/Sn isothermal solidification technology for hermetic packaging of MEMS
被引:8
作者:
Li Li
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R China
Li Li
[1
]
Jiwei Jiao
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R China
Jiwei Jiao
[1
]
Le Luo
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R China
Le Luo
[1
]
Yuelin Wang
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R China
Yuelin Wang
[1
]
机构:
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R China
来源:
2006 1ST IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1-3
|
2006年
This paper introduces a novel wafer-level hermetic packaging technology for MEMS based on Cu/Sn isothermal solidification (IS) technology We designed the structure of the intermediate multi-layer and the pattern of sealing rings, optimized the bonding process, and analyzed some key factors affecting the hermeticity, such as the dimension of the sealing rings. Successful Cu/Sn IS bonding was realized at a low bonding temperature of 350 degrees C under the optimal conditions. High shear strength of 27.7MPa and excellent leak rate of around 2 X 10(-9)atm cc/s have been achieved, which meet the requirements of MIL-STD-883E. Finally we designed and manufactured the micro resonator based on the Cu/Sn IS technology.
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页码:1133 / +
页数:2
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[1]
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机构:Univ Arkansas, Dept Elect Engn, Mat & Mfg Res Lab, Fayetteville, AR 72701 USA
Tao, Y
Malshe, AP
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Univ Arkansas, Dept Elect Engn, Mat & Mfg Res Lab, Fayetteville, AR 72701 USAUniv Arkansas, Dept Elect Engn, Mat & Mfg Res Lab, Fayetteville, AR 72701 USA
Malshe, AP
Brown, WD
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机构:Univ Arkansas, Dept Elect Engn, Mat & Mfg Res Lab, Fayetteville, AR 72701 USA
机构:Univ Arkansas, Dept Elect Engn, Mat & Mfg Res Lab, Fayetteville, AR 72701 USA
Tao, Y
Malshe, AP
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Univ Arkansas, Dept Elect Engn, Mat & Mfg Res Lab, Fayetteville, AR 72701 USAUniv Arkansas, Dept Elect Engn, Mat & Mfg Res Lab, Fayetteville, AR 72701 USA
Malshe, AP
Brown, WD
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机构:Univ Arkansas, Dept Elect Engn, Mat & Mfg Res Lab, Fayetteville, AR 72701 USA