A High-Current Kink Effect Free Z-Gate Poly-Si Thin-Film Transistor

被引：4

作者：

Chien, Feng-Tso ^{[1
]}

Yu, Cheng-Hao ^{[1
]}

Chen, Chii-Wen ^{[2
]}

Cheng, Ching-Hwa ^{[1
]}

Kang, Tsung-Kuei ^{[1
]}

Chiu, Hsien-Chin ^{[3
]}

机构：

[1] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan

[2] Minghsin Univ Sci & Technol, Dept Elect Engn, Hsinchu 304, Taiwan

[3] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 07期

关键词：

Polycrystalline silicon thin-film transistor (poly-Si TFT); double-gate; split-channel; kink effect; raised source/drain (RSD); DAMASCENE PROCESS; TFT TECHNOLOGY; REDUCTION;

D O I：

10.1109/LED.2016.2566959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a high-current kink effect free Z-gate polycrystalline silicon (poly-Si) thin-film transistor (ZG-TFT) is proposed and demonstrated. The ZG-TFT, which is formed by a raised source/drain (RSD) region and a split channel (SC) structure, reveals better device performance. Our experimental results show that the ON-current of ZG-TFT is about two times higher than that of a conventional single top gate TFT, and the leakage current is greatly reduced simultaneously. In addition, the high drain electric field is considerably reduced by the RSD structure, and the SC design can further effectively suppress the kink effect. Therefore, a better ON/OFF current ratio and a higher drain breakdown voltage can be achieved.

引用

页码：886 / 889

页数：4

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