Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice

被引：13

作者：

Bi, Han ^{[1
]}

Han, Xi ^{[2
,3
]}

Liu, Lu ^{[1
]}

Zhao, Yunhao ^{[1
]}

Zhao, Xuebing ^{[1
]}

Wang, Guowei ^{[2
,3
]}

Xu, Yingqiang ^{[2
,3
]}

Niu, Zhichuan ^{[2
,3
]}

Shi, Yi ^{[4
,5
]}

Che, Renchao ^{[1
]}

机构：

[1] Fudan Univ, Dept Mat Sci, Collaborat Innovat Ctr Chem Energy Mat, Lab Adv Mat, Shanghai 200438, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[3] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100083, Peoples R China

[4] Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[5] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2017年 / 9卷 / 32期

基金：

中国国家自然科学基金;

关键词：

type II superlattice; interfacial components; quantum efficiency; strain distribution; charge accumulation; II SUPERLATTICE; STRAIN;

D O I：

10.1021/acsami.7b08397

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A series of systematic electron microscopy imaging evidence are illustrated to prove that a high-quality interface is vital for enhancing quantum efficiency from 23 to 50% effectively, because improved crystal quality of each layer can suppress the disordered atom arrangement and enhance the carrier lifetime via decreasing the overall residual strain. The distribution,width of charge rises and then falls as bias increasing, revealing the existence of an optimum operating voltage, which could be attributed to the proper energy band bending. Our results provide new insights into the understanding of the association between macro-property and microstructure of the superlattice system.

引用

页码：26642 / 26647

页数：6

共 30 条

[1] W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency [J].