Investigation of Sn-Pb solder bumps of prototype photo detectors for the LHCb experiment

被引:1
|
作者
Delsante, ML [1 ]
Izquierdo, GA [1 ]
Gys, T [1 ]
机构
[1] CERN, European Org Nucl Res, CH-1211 Geneva, Switzerland
关键词
solder intermetallics; bump bonding; mechanical properties;
D O I
10.1016/j.jmatprotec.2004.04.324
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The large hadron collider (LHC) is now under construction at the European Organization for Nuclear Research (CERN). LHCb is one of the dedicated LHC experiments, allowing high energy proton-proton collisions to be exploited. This paper presents the results of the metallurgic studies carried out on Sn-Pb solder bumps of prototype vacuum photo detectors under development for LHCb, and in particular for the ring imaging Cherenkov-hybrid photo diode (RICH-HPD) project. These detectors encapsulate, in a vacuum tube, an assembly made of two silicon chips bonded together by a matrix of solder bumps. Each bump lies on a suitable system of under-bump metallic layers ensuring mechanical and electrical transition between the chip pad and the solder alloy. During manufacturing of the detector, bump-bonded (BB) assemblies are exposed to severe heat cycles up to 400degreesC inducing, in the present fabrication process, a clear degradation of electrical connectivity. Several investigations such as microstructural observations and analyses, as well as pull tests at room temperature, were performed. First results show severe dissolution of under-bump nickel and copper layers with formation of tin intermetallic compounds and segregation of lead phase. This microstructure, developing after the heat cycles, is at the origin of the observed poor strength and adherence of bumps. The present study provides a better understanding of the mechanical and microstructural properties of the bump-bonded assemblies in view of improving their fabrication. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码:1668 / 1672
页数:5
相关论文
共 50 条
  • [21] Wetting Behavior and Mechanical Properties of Sn-Zn and Sn-Pb Solder Alloys
    Garcia, Leonardo R.
    Osorio, Wislei R.
    Peixoto, Leandro C.
    Garcia, Amauri
    JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (11) : 2405 - 2414
  • [22] Wetting Behavior and Mechanical Properties of Sn-Zn and Sn-Pb Solder Alloys
    Leonardo R. Garcia
    Wislei R. Osório
    Leandro C. Peixoto
    Amauri Garcia
    Journal of Electronic Materials, 2009, 38 : 2405 - 2414
  • [23] The effects of Au film thickness on the reliability of Sn-Pb solder joints
    Lv, Xiaorui
    Lin, Pengrong
    Huang, Yingzhuo
    Jiang, Xueming
    Lian, Binhao
    Yao, Quanbin
    2015 16TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, 2015,
  • [24] Interfacial reactions between eutectic Sn-Pb solder and Co substrate
    Wang, Chao-hong
    Kuo, Chun-yi
    JOURNAL OF MATERIALS SCIENCE, 2011, 46 (08) : 2654 - 2661
  • [25] Experimental investigation of microstructural effects in sn-pb solder accumulated during ten years of service life
    Werner M.
    Weinberg K.
    Micro and Nanosystems, 2021, 13 (02) : 170 - 179
  • [26] Investigation of interfacial reaction between eutectic Sn-Pb solder droplet and Au/Ni/Cu pad
    Li, F. Q.
    Wang, C. Q.
    Tian, Y. H.
    MATERIALS SCIENCE AND TECHNOLOGY, 2008, 24 (06) : 744 - 750
  • [27] FORMATION AND FAILURE OF OXIDE LAYERS ON THE SURFACE OF THE Sn-Pb SOLDER.
    Krasyuk, A.D.
    Chenakin, S.P.
    Berzina, A.I.
    Protection of Metals (English translation of Zaschita Metallov), 1986, 22 (04): : 472 - 474
  • [28] Formation of Pb/63Sn solder bumps using a solder droplet jetting method
    Son, HY
    Nah, JW
    Paik, KW
    IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, 2005, 28 (03): : 274 - 281
  • [29] A potential drop-in replacement for eutectic Sn-Pb solder - The Sn-Zn-Ag-Al-Ga solder
    Lin, KL
    Chen, KI
    Shi, PC
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (12) : 1490 - 1495
  • [30] A potential drop-in replacement for eutectic Sn-Pb solder—The Sn-Zn-Ag-Al-Ga solder
    Kwang-Lung Lin
    Kang-I Chen
    Po-Cheng Shi
    Journal of Electronic Materials, 2003, 32 : 1490 - 1495