Optical-induced dielectric tunability properties of DAST crystal in THz range

被引:1
作者
Xu, De-Gang [1 ,2 ]
Zhu, Xian-Li [1 ,2 ]
Wang, Yu-Ye [1 ,2 ]
Li, Ji-Ning [1 ,2 ]
He, Yi-Xin [1 ,2 ]
Pang, Zi-Bo [3 ]
Cheng, Hong-Juan [3 ]
Yao, Jian-Quan [1 ,2 ]
机构
[1] Tianjin Univ, Sch Precis Instrument & Optoelect Engn, Inst Laser & Optoelect, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Minist Educ, Key Lab Optoelect Informat Technol, Tianjin 300072, Peoples R China
[3] 46th Res Inst China Elect Technol Grp Corp, Tianjin 300220, Peoples R China
基金
中国国家自然科学基金;
关键词
THz wave; organic DAST crystal; photogenerated carrier; dielectric property; ORGANIC-CRYSTAL; SINGLE-CRYSTALS; GROWTH; TOSYLATE; PULSES;
D O I
10.1088/1674-1056/ab4e81
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The optical-induced dielectric tunability properties of DAST crystal in THz range were experimentally demonstrated. The DAST crystal was grown by the spontaneous nucleation method (SNM) and characterized by infrared spectrum. With the optimum wavelength of the exciting optical field, the transmission spectra of the DAST crystal excited by 532 nm laser under different power were measured by terahertz time-domain spectroscopy (THz-TDS) at room temperature. The transmitted THz intensity reduction of 26 % was obtained at 0.68 THz when the optical field was up to 80 mW. Meanwhile, the variation of refractive index showed an approximate quadratic behavior with the exciting optical field, which was related to the internal space charge field of photorefractive phenomenon in the DAST crystal caused by the photogenerated carrier. A significant enhancement of 13.7 % for THz absorption coefficient occurred at 0.68 THz due to the photogenerated carrier absorption effect in the DAST crystal.
引用
收藏
页数:6
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