Comparison of ferromagnetism in n- and p-type magnetic semiconductor thin films of ZnCoO

被引：5

作者：

Lee, Y. H. ^{[1
]}

Lee, J. C. ^{[1
]}

Min, J. F. ^{[1
]}

Su, C. W. ^{[2
]}

机构：

[1] Natl Cheng Kung Univ, Dept Phys, Tainan 70101, Taiwan

[2] Natl Chiayi Univ, Dept Appl Phys, Chiayi 60004, Taiwan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2011年 / 323卷 / 14期

关键词：

Diluted magnetic semiconductor; Ferromagnetism; Co doped ZnO; ZNO; GREEN;

D O I：

10.1016/j.jmmm.2011.02.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Both n- and p-type diluted magnetic semiconductor ZnCoO are made by magnetron co-sputtering with, respectively, dopants of Al and dual dopants of Al and N. The two sputtering targets are compound ZnCoO with 5% weight of Co and pure metal Al. Sputtering gases for n- and p-type films are pure Ar and N-2, respectively. These films are magnetic at room temperature and possess free electron- and hole-concentration of 5.34 x 10(20) and 5.27 x 10(13) cm(-3). Only the n-type film exhibits anomalous Hall-effect signals. Magnetic properties of these two types of films are compared and discussed based on measurements of microstructure and magneto-transport properties. (c) 2011 Elsevier B.V. All rights reserved.

引用

页码：1846 / 1850

页数：5

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