Comparison of ferromagnetism in n- and p-type magnetic semiconductor thin films of ZnCoO

被引：5
|
作者：
Lee, Y. H. [1 ]
Lee, J. C. [1 ]
Min, J. F. [1 ]
Su, C. W. [2 ]
机构：
[1] Natl Cheng Kung Univ, Dept Phys, Tainan 70101, Taiwan
[2] Natl Chiayi Univ, Dept Appl Phys, Chiayi 60004, Taiwan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2011年 / 323卷 / 14期
关键词：
Diluted magnetic semiconductor; Ferromagnetism; Co doped ZnO; ZNO; GREEN;
D O I：
10.1016/j.jmmm.2011.02.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Both n- and p-type diluted magnetic semiconductor ZnCoO are made by magnetron co-sputtering with, respectively, dopants of Al and dual dopants of Al and N. The two sputtering targets are compound ZnCoO with 5% weight of Co and pure metal Al. Sputtering gases for n- and p-type films are pure Ar and N-2, respectively. These films are magnetic at room temperature and possess free electron- and hole-concentration of 5.34 x 10(20) and 5.27 x 10(13) cm(-3). Only the n-type film exhibits anomalous Hall-effect signals. Magnetic properties of these two types of films are compared and discussed based on measurements of microstructure and magneto-transport properties. (c) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1846 / 1850
页数：5
相关论文
共 50 条
  • [1] Comparison of Autoemission Properties of Tungsten/n- and p-Type Semiconductor Systems
    Egorov, N. V.
    Antonova, L. I.
    Antonov, S. P.
    JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2008, 2 (05) : 748 - 750
  • [2] Effects of N-Doping on Magnetic Properties of ZnCoO Diluted Magnetic Semiconductor Thin Films
    Lee, Yuhua
    Lee, J. C.
    Su, Chiung-Wu
    IEEE TRANSACTIONS ON MAGNETICS, 2010, 46 (06) : 1565 - 1568
  • [3] Influence of p-type and n-type dopants on the magnetic properties of ZnCuO based diluted magnetic semiconductor thin films
    Zhang, L. Q.
    Ye, Z. Z.
    Lu, J. G.
    Lu, B.
    Zhang, Y. Z.
    Zhu, L. P.
    Zhang, J.
    Yang, D.
    Wu, K. W.
    Huang, J.
    Xie, Z.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (01)
  • [4] Ferromagnetism in ZnCoO thin films deposited by PLD
    Karamat, S.
    Rawat, R. S.
    Tan, T. L.
    Lee, P.
    Chen, R.
    Sun, H. D.
    Zhou, W.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 101 (04): : 717 - 722
  • [5] Ferromagnetism in ZnCoO thin films deposited by PLD
    S. Karamat
    R. S. Rawat
    T. L. Tan
    P. Lee
    R. Chen
    H. D. Sun
    W. Zhou
    Applied Physics A, 2010, 101 : 717 - 722
  • [6] Highly conductive n- and p-type CuInO thin films by reactive evaporation
    Mary, Surya A.
    Nair, Bindu G.
    Naduvath, Johns
    Okram, G. S.
    Remillard, Stephen K.
    Sreenivasan, P. V.
    Philip, Rachel R.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 600 : 159 - 161
  • [7] Characterization of thin layers of n- and p-type GaN
    Castaldini, A
    Cavallini, A
    Polenta, L
    Díaz-Guerra, C
    Piqueras, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 308 - 312
  • [8] n- and p-Type HgTe Quantum Dot Films
    Liu, Heng
    Keuleyan, Sean
    Guyot-Sionnest, Philippe
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (01): : 1344 - 1349
  • [9] RF diode reactive sputtering of n- and p-type zinc oxide thin films
    Tvarozek, V.
    Shtereva, K.
    Novotny, I.
    Kovac, J.
    Sutta, P.
    Srnanek, R.
    Vincze, A.
    VACUUM, 2007, 82 (02) : 166 - 169
  • [10] Effect of hydrostatic pressure on the resistivity of n- and p-type polycrystalline InSb thin films
    Inst Fizyki, Poznan, Poland
    Phys Status Solidi A, 1 (143-151):
12345