High-frequency micro-machined power inductors

被引：31

作者：

Wang, N ^{[1
]}

O'Donnell, T ^{[1
]}

Roy, S ^{[1
]}

Brunet, M ^{[1
]}

McCloskey, P ^{[1
]}

O'Mathuna, SC ^{[1
]}

机构：

[1] NMRC, Cork, Ireland

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2005年 / 290卷

关键词：

micro-machined; power inductor; high frequency;

D O I：

10.1016/j.jmmm.2004.11.434

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Power inductors have been fabricated on silicon substrates using low-temperature IC compatible processes. The electrical properties of these micro-inductors have been measured and discussed. A maximum quality factor of 6 at 4 MHz has been achieved with an inductance value of about 160 n.H. The DC saturation currents of the non-gapped and gapped inductors are similar to 500 and 700mA, respectively. The relatively high Q factor and the load current characteristics allow these micro-machined inductors to be used in integrated power converters. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：1347 / 1350

页数：4

共 11 条

[1] Micromachined planar inductors on silicon wafers for MEMS applications [J].