共 26 条
Liquid crystals for organic thin-film transistors
被引:526
作者:

论文数: 引用数:
h-index:
机构:

Usui, Takayuki
论文数: 0 引用数: 0
h-index: 0
机构:
Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
Japan Sci & Technol Agcy JST, Core Res Evolut Sci & Technol, Kawaguchi, Saitama 3320012, Japan Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

Hanna, Jun-ichi
论文数: 0 引用数: 0
h-index: 0
机构:
Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
Japan Sci & Technol Agcy JST, Core Res Evolut Sci & Technol, Kawaguchi, Saitama 3320012, Japan Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
机构:
[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Japan Sci & Technol Agcy JST, Core Res Evolut Sci & Technol, Kawaguchi, Saitama 3320012, Japan
关键词:
FIELD-EFFECT TRANSISTORS;
CHARGE-TRANSPORT;
HIGH-MOBILITY;
SEMICONDUCTING POLYMERS;
FABRICATION;
D O I:
10.1038/ncomms7828
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1] benzothieno[3,2-b][1] benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 degrees C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm(2)V(-1) s(-1)) after thermal annealing at 120 degrees C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.
引用
收藏
页数:8
相关论文
共 26 条
[1]
Thieno[3,2-b]thiophene-Diketopyrrolopyrrole-Containing Polymers for High-Performance Organic Field-Effect Transistors and Organic Photovoltaic Devices
[J].
Bronstein, Hugo
;
Chen, Zhuoying
;
Ashraf, Rap Shahid
;
Zhang, Weimin
;
Du, Junping
;
Durrant, James R.
;
Tuladhar, Pabitra Shakya
;
Song, Kigook
;
Watkins, Scott E.
;
Geerts, Yves
;
Wienk, Martijn M.
;
Janssen, Rene A. J.
;
Anthopoulos, Thomas
;
Sirringhaus, Henning
;
Heeney, Martin
;
McCulloch, Iain
.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
2011, 133 (10)
:3272-3275

论文数: 引用数:
h-index:
机构:

Chen, Zhuoying
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Ashraf, Rap Shahid
论文数: 0 引用数: 0
h-index: 0
机构:
Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Zhang, Weimin
论文数: 0 引用数: 0
h-index: 0
机构:
Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Du, Junping
论文数: 0 引用数: 0
h-index: 0
机构:
Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Durrant, James R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Tuladhar, Pabitra Shakya
论文数: 0 引用数: 0
h-index: 0
机构:
Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Song, Kigook
论文数: 0 引用数: 0
h-index: 0
机构:
Kyung Hee Univ, Yongin 446701, Gyeonggi Do, South Korea Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Watkins, Scott E.
论文数: 0 引用数: 0
h-index: 0
机构: Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Geerts, Yves
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Libre Bruxelles, B-1050 Brussels, Belgium Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Wienk, Martijn M.
论文数: 0 引用数: 0
h-index: 0
机构:
Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Janssen, Rene A. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Anthopoulos, Thomas
论文数: 0 引用数: 0
h-index: 0
机构:
Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Sirringhaus, Henning
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

Heeney, Martin
论文数: 0 引用数: 0
h-index: 0
机构:
Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England

McCulloch, Iain
论文数: 0 引用数: 0
h-index: 0
机构:
Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England
[2]
Three-dimensional band structure and bandlike mobility in oligoacene single crystals:: A theoretical investigation
[J].
Cheng, YC
;
Silbey, RJ
;
da Silva, DA
;
Calbert, JP
;
Cornil, J
;
Brédas, JL
.
JOURNAL OF CHEMICAL PHYSICS,
2003, 118 (08)
:3764-3774

Cheng, YC
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Chem, Cambridge, MA 02139 USA MIT, Dept Chem, Cambridge, MA 02139 USA

Silbey, RJ
论文数: 0 引用数: 0
h-index: 0
机构: MIT, Dept Chem, Cambridge, MA 02139 USA

da Silva, DA
论文数: 0 引用数: 0
h-index: 0
机构: MIT, Dept Chem, Cambridge, MA 02139 USA

Calbert, JP
论文数: 0 引用数: 0
h-index: 0
机构: MIT, Dept Chem, Cambridge, MA 02139 USA

Cornil, J
论文数: 0 引用数: 0
h-index: 0
机构: MIT, Dept Chem, Cambridge, MA 02139 USA

Brédas, JL
论文数: 0 引用数: 0
h-index: 0
机构: MIT, Dept Chem, Cambridge, MA 02139 USA
[3]
Charge transport in organic semiconductors
[J].
Coropceanu, Veaceslav
;
Cornil, Jerome
;
da Silva Filho, Demetrio A.
;
Olivier, Yoann
;
Silbey, Robert
;
Bredas, Jean-Luc
.
CHEMICAL REVIEWS,
2007, 107 (04)
:926-952

Coropceanu, Veaceslav
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA

Cornil, Jerome
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA

da Silva Filho, Demetrio A.
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA

论文数: 引用数:
h-index:
机构:

Silbey, Robert
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA

Bredas, Jean-Luc
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
[4]
Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors
[J].
Ebata, Hideaki
;
Izawa, Takafumi
;
Miyazaki, Eigo
;
Takimiya, Kazuo
;
Ikeda, Masaaki
;
Kuwabara, Hirokazu
;
Yui, Tatsuto
.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
2007, 129 (51)
:15732-+

Ebata, Hideaki
论文数: 0 引用数: 0
h-index: 0
机构:
Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

Izawa, Takafumi
论文数: 0 引用数: 0
h-index: 0
机构:
Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

Miyazaki, Eigo
论文数: 0 引用数: 0
h-index: 0
机构:
Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

论文数: 引用数:
h-index:
机构:

Ikeda, Masaaki
论文数: 0 引用数: 0
h-index: 0
机构: Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

Kuwabara, Hirokazu
论文数: 0 引用数: 0
h-index: 0
机构:
Nippon Kayaku Co Ltd, Funct Chem R&D, Tokyo 1158588, Japan Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

Yui, Tatsuto
论文数: 0 引用数: 0
h-index: 0
机构:
Nippon Kayaku Co Ltd, Funct Chem R&D, Tokyo 1158588, Japan Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan
[5]
Dihexylquaterthiophene, a two-dimensional liquid crystal-like organic semiconductor with high transport properties
[J].
Garnier, F
;
Hajlaoui, R
;
El Kassmi, A
;
Horowitz, G
;
Laigre, L
;
Porzio, W
;
Armanini, M
;
Provasoli, F
.
CHEMISTRY OF MATERIALS,
1998, 10 (11)
:3334-3339

Garnier, F
论文数: 0 引用数: 0
h-index: 0
机构: CNRS, Mat Mol Lab, F-94320 Thiais, France

Hajlaoui, R
论文数: 0 引用数: 0
h-index: 0
机构: CNRS, Mat Mol Lab, F-94320 Thiais, France

El Kassmi, A
论文数: 0 引用数: 0
h-index: 0
机构: CNRS, Mat Mol Lab, F-94320 Thiais, France

Horowitz, G
论文数: 0 引用数: 0
h-index: 0
机构: CNRS, Mat Mol Lab, F-94320 Thiais, France

Laigre, L
论文数: 0 引用数: 0
h-index: 0
机构: CNRS, Mat Mol Lab, F-94320 Thiais, France

Porzio, W
论文数: 0 引用数: 0
h-index: 0
机构: CNRS, Mat Mol Lab, F-94320 Thiais, France

Armanini, M
论文数: 0 引用数: 0
h-index: 0
机构: CNRS, Mat Mol Lab, F-94320 Thiais, France

Provasoli, F
论文数: 0 引用数: 0
h-index: 0
机构: CNRS, Mat Mol Lab, F-94320 Thiais, France
[6]
Tuning charge transport in solution-sheared organic semiconductors using lattice strain
[J].
Giri, Gaurav
;
Verploegen, Eric
;
Mannsfeld, Stefan C. B.
;
Atahan-Evrenk, Sule
;
Kim, Do Hwan
;
Lee, Sang Yoon
;
Becerril, Hector A.
;
Aspuru-Guzik, Alan
;
Toney, Michael F.
;
Bao, Zhenan
.
NATURE,
2011, 480 (7378)
:504-U124

Giri, Gaurav
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Verploegen, Eric
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Mannsfeld, Stefan C. B.
论文数: 0 引用数: 0
h-index: 0
机构:
SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Atahan-Evrenk, Sule
论文数: 0 引用数: 0
h-index: 0
机构:
Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Kim, Do Hwan
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Lee, Sang Yoon
论文数: 0 引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Display Device Lab, Yongin 449712, Kyunggi Do, South Korea Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Becerril, Hector A.
论文数: 0 引用数: 0
h-index: 0
机构:
Brigham Young Univ Idaho, Dept Chem, Rexburg, ID 83460 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Aspuru-Guzik, Alan
论文数: 0 引用数: 0
h-index: 0
机构:
Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Toney, Michael F.
论文数: 0 引用数: 0
h-index: 0
机构:
SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Bao, Zhenan
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[7]
High Uniformity and High Thermal Stability of Solution-Processed Polycrystalline Thin Films by Utilizing Highly Ordered Smectic Liquid Crystals
[J].
Iino, Hiroaki
;
Kobori, Takeo
;
Hanna, Jun-ichi
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
2012, 51 (11)

论文数: 引用数:
h-index:
机构:

Kobori, Takeo
论文数: 0 引用数: 0
h-index: 0
机构:
Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268503, Japan
Japan Sci & Technol Agcy JST, CREST, Kawaguchi, Saitama 3320012, Japan Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268503, Japan

Hanna, Jun-ichi
论文数: 0 引用数: 0
h-index: 0
机构:
Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268503, Japan
Japan Sci & Technol Agcy JST, CREST, Kawaguchi, Saitama 3320012, Japan Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268503, Japan
[8]
Improved thermal stability in organic FET fabricated with a soluble BTBT derivative
[J].
Iino, Hiroaki
;
Kobori, Takeo
;
Hanna, Jun-ichi
.
JOURNAL OF NON-CRYSTALLINE SOLIDS,
2012, 358 (17)
:2516-2519

论文数: 引用数:
h-index:
机构:

Kobori, Takeo
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

Hanna, Jun-ichi
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[9]
Liquid crystalline thin films as a precursor for polycrystalline thin films aimed at field effect transistors
[J].
Iino, Hiroaki
;
Hanna, Jun-ichi
.
JOURNAL OF APPLIED PHYSICS,
2011, 109 (07)

论文数: 引用数:
h-index:
机构:

Hanna, Jun-ichi
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[10]
Availability of Liquid Crystallinity in Solution Processing for Polycrystalline Thin Films
[J].
Iino, Hiroaki
;
Hanna, Jun-ichi
.
ADVANCED MATERIALS,
2011, 23 (15)
:1748-+

论文数: 引用数:
h-index:
机构:

Hanna, Jun-ichi
论文数: 0 引用数: 0
h-index: 0
机构:
Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
JST CREST, Midori Ku, Yokohama, Kanagawa 2268503, Japan Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan