Development of high luminous efficacy red-emitting phosphor-in-glass for high-power LED lighting systems using our original low Tg and Ts glass

被引：6

作者：

Park, Young Ji ^{[1
,2
]}

Jeong, Gyu Jin ^{[1
,2
]}

Kim, Jin Ho ^{[1
]}

Lee, Youngjin ^{[1
]}

Kim, Sun Woog ^{[1
]}

Kim, Cheol Jin ^{[2
]}

Hwang, Jonghee ^{[1
]}

机构：

[1] Korea Inst Ceram Engn & Technol, Elect Convergence Mat Div, Opt & Elect Component Mat Ctr, Jinju 52831, South Korea

[2] Gyeongsang Natl Univ, Div Mat Sci & Engn & Convergence Technol, Jinju 52828, South Korea

来源：

OPTICS LETTERS | 2019年 / 44卷 / 24期

关键词：

LUMINESCENCE PROPERTIES; CRYSTAL-STRUCTURE; THERMAL-TREATMENT; WHITE; DEGRADATION; MECHANISM; DIODES; CE3+; EU2+;

D O I：

10.1364/OL.44.006057

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Red-emitting phosphor-in-glass (PiG) materials with a high luminescence efficiency were developed by co-firing commercial red-emitting (Sr, Ca)AlSiN3:Eu2+ (SCASN) phosphor and our original glass fits with a composition of Li2O-Na2O-ZnO-Al2O3-B2O3-P2O5, which has a low Tg (271 degrees C) and Ts (380 degrees C) temperatures. By optimizing the sintering temperature and the content of the phosphor, the highest luminous efficacy was obtained for the 3 wt.% SCASN-based PiG sintered at 400 degrees C, which showed a luminous efficacy of 25 lm/Wrad by combining the PiG materials with a blue light-emitting diode (LED) chip-on-board (COB, incident power = 100 mA). The internal quantum efficiency of this sample under excitation at 450 nm was 53%. The PiG-based LED maintained a high luminous efficacy when the incident power of the blue COB increased up to 5.5 W (47 lm). (C) 2019 Optical Society of America

引用

页码：6057 / 6060

页数：4