Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer

被引：25

作者：

Roul, Basanta ^{[1
,2
]}

Pant, Rohit ^{[2
]}

Chirakkara, Saraswathi ^{[2
]}

Chandan, Greeshma ^{[2
]}

Nanda, K. K. ^{[2
]}

Krupanidhi, S. B. ^{[2
]}

机构：

[1] Bharat Elect Ltd, Cent Res Lab, Bangalore 560013, Karnataka, India

[2] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 10期

关键词：

Detectivity; electrical characterization; high-resolution X-ray diffraction (HRXRD); internal photoconductive gain; photoluminescence (PL); pulsed laser deposition; ultraviolet (UV) photodetectors; ZnO thin films; THIN-FILMS; PHOTOLUMINESCENCE; FABRICATION;

D O I：

10.1109/TED.2017.2741971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Studies have been carried out on the enhancement of responsivity and detectivity of the ZnO thin-films-based ultraviolet photodetectors by introducing an AlN buffer layer on silicon substrate. The ZnO film grown with AlN buffer layer established an epitaxial relation with the substrate and was found to show improved crystallinity with excellent optical properties. A strong and narrow photoluminescence emission was observed on the ZnO film grown with buffer layer, while a defect related broad emission was dominated on the film without buffer layer. The photodetectors showed a higher responsivity (R-lambda) of 1.03x10(4) A/W with a specific detectivity (D*) of 5.21 x 10(12) cm.Hz(1/2).W-1 at an applied bias of 3 V due to their excellent crystal quality.

引用

页码：4161 / 4166

页数：6

共 36 条

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