Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy

被引：15

作者：

Guo, Q. X. ^{[1
]}

Senda, H. ^{[1
]}

Saito, K. ^{[1
]}

Tanaka, T. ^{[1
]}

Nishio, M. ^{[1
]}

Ding, J. ^{[2
]}

Fan, T. X. ^{[2
]}

Zhang, D. ^{[2
]}

Wang, X. Q. ^{[3
]}

Liu, S. T. ^{[3
]}

Shen, B. ^{[3
]}

Ohtani, R. ^{[4
]}

机构：

[1] Saga Univ, Synchrotron Light Applicat Ctr, Dept Elect & Elect Engn, Saga 8408502, Japan

[2] Shanghai Jiao Tong Univ, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China

[3] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[4] Kyushu Synchrotron Light Res Ctr, Saga 8410005, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 18期

关键词：

SOLAR-CELL; SCATTERING; GROWTH; FILMS; MOVPE;

D O I：

10.1063/1.3583461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the electronic structure of GaInN semiconductors by performing x-ray absorption near-edge fine structure (XANES) spectroscopy at Ga K-edge and self-consistent-field real-space multiple-scattering theory calculations. It was demonstrated that the nondestructive Ga K-edge XANES spectra can be used as the fingerprints of structure and composition for GaInN. The theoretical calculations gave a reasonable reproduction of the experimental spectral features. The results revealed that the combination of the experimental XANES and the theoretical calculations is a powerful tool for studying the electronic structure of GaInN semiconductors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3583461]

引用

页数：3

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