Increased metal-insulator transition temperatures in epitaxial thin films of V2O3 prepared in reduced oxygen environments

被引：42

作者：

Brockman, J. ^{[1
,2
]}

Aetukuri, N. P. ^{[1
,3
]}

Topuria, T. ^{[1
]}

Samant, M. G. ^{[1
]}

Roche, K. P. ^{[1
]}

Parkin, S. S. P. ^{[1
]}

机构：

[1] IBM Res Corp, Almaden Res Ctr, San Jose, CA 95120 USA

[2] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 15期

关键词：

ELECTRONIC-PROPERTIES; DEPOSITION; SYSTEM; PHASE;

D O I：

10.1063/1.3574910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of V2O3 were grown epitaxially on c-plane sapphire substrates by oxygen plasma-assisted thermal evaporation. Reducing the amount of oxygen supplied during growth led to a nearly 50 K increase in V2O3's metal-insulator transition temperature to a temperature as high as 184 K. By systematically varying the oxygen pressure the transition temperature monotonically increased, which was accompanied by a concomitant increase in the room-temperature resistivity. These trends are consistent with a continuous change in the stoichiometry of V2O3. (C) 2011 American Institute of Physics. [doi:10.1063/1.3574910]

引用

页数：3

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