Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process

被引：111

作者：

Gopalan, C. ^{[1
]}

Ma, Y. ^{[1
]}

Gallo, T. ^{[1
]}

Wang, J. ^{[1
]}

Runnion, E. ^{[1
]}

Saenz, J. ^{[1
]}

Koushan, F. ^{[1
]}

Blanchard, P. ^{[1
]}

Hollmer, S. ^{[1
]}

机构：

[1] Adesto Technol, Sunnyvale, CA 94089 USA

来源：

SOLID-STATE ELECTRONICS | 2011年 / 58卷 / 01期

关键词：

CBRAM; Solid electrolyte; Embedded non-volatile memory; Electrodeposition; CMOS processing; Low power;

D O I：

10.1016/j.sse.2010.11.024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the promising technologies under development for next generation non-volatile memory is the Conductive Bridging Random Access Memory (CBRAM) which utilizes the reversible switching of an electro-resistive dielectric between two conductive states as means of storing logical data [1-7]. In this paper, we describe the successful integration of CBRAM technology into an industry standard logic process. Moreover, we show functional operation of such a fully CMOS integrated CBRAM memory array and highlight its specific fundamental low power characteristics that make it suitable to be used in scaled embedded application as well as discrete devices. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：54 / 61

页数：8

共 10 条

[1]

Benini L., 2003, ACM T EMBED COMPUT S, V2, P5

[2] Power and Energy Perspectives of Nonvolatile Memory Technologies [J].