Growth of semiconductor silicon crystals

被引：25

作者：

Kakimoto, Koichi ^{[1
]}

Gao, Bing ^{[1
]}

Liu, Xin ^{[1
]}

Nakano, Satoshi ^{[1
]}

机构：

[1] Kyushu Univ, Appl Mech Res Inst, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 2016年 / 62卷 / 02期

关键词：

silicon; convection; defect; impurity; stress; GAS-FLOW RATE; OXYGEN-TRANSPORT; MAGNETIC-FIELD; CZOCHRALSKI FURNACE; CARBON; DEFECTS; MODEL; PRECIPITATION; SIMULATION; MECHANISM;

D O I：

10.1016/j.pcrysgrow.2016.04.014

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：273 / 285

页数：13

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