Structural studies of room-temperature RF magnetron sputtered ZnO films under different RF powered conditions

被引：60

作者：

Kim, HW ^{[1
]}

Kim, NH ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 103卷 / 03期

关键词：

RF powers ZnO; room temperature; thin film;

D O I：

10.1016/S0921-5107(03)00281-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have deposited the ZnO thin films on Si(001) substrate at room temperature by the RF magnetron sputtering method. We demonstrated that the radio frequency (R-F) plasma power can dramatically affect the structural properties of ZnO thin films. Under the optimized condition of RF power of 150 W, a c-axis-oriented wurtzite structured ZnO thin film with the X-ray diffraction (XRD) full-width at half-maximum (FWHM) of 0.21degrees and the atomic force microscopy (AFM) root mean square (RMS) values of <20 nm was prepared. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：297 / 302

页数：6

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