Color emission and dielectric properties of Eu-doped Gd2O3 gate oxide thin films

被引：9

作者：

Choi, Sungho ^{[1
]}

Park, Byung-Yoon ^{[1
,3
]}

Ahn, Taek ^{[4
]}

Kim, Ji Young ^{[2
]}

Hong, Chang Seop ^{[3
]}

Yi, Mi Hye ^{[2
]}

Jung, Ha-Kyun ^{[1
]}

机构：

[1] Korea Res Inst Chem Technol, Device Mat Res Ctr, Taejon 305600, South Korea

[2] Korea Res Inst Chem Technol, Informat & Elect Polymer Res Ctr, Taejon 305600, South Korea

[3] Korea Univ, Dept Chem, Seoul 136701, South Korea

[4] Kyungsung Univ, Dept Chem, Pusan, South Korea

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 10期

关键词：

Dielectric properties; Gadolinium oxide; Capacitance voltage; Photoluminescence; Sol-gel; Rare earth doping; FABRICATION;

D O I：

10.1016/j.tsf.2010.12.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-k Gd2O3 used for thin film transistor (TFT) gate insulators has been synthesized via a simple solution process. Phase analysis and capacitive performance reveal that a high dielectric constant of similar to 20 and a low leakage current level of <10(-8) A/cm(2) at 1 MV/cm with a good transparency under the visible wavelength region are readily produced by the sol-gel method. Eu3+ doping leads to an increased dielectric constant induced by the additional electric dipole transition, which is evidently visualized by the photoluminescence behavior and/or by the defect-controlled thin film microstructures. Thus, the solution-processed (Gd,Eu)(2)O-3 film is a viable gate insulator to be considered for the proposed "color emissive" switching devices as well as for the low power-driven TFT devices. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3272 / 3275

页数：4

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