Characterization of AlGaN layer with high Al content grown by mixed-source HVPE

被引：14

作者：

Ahn, HS ^{[1
]}

Kim, KH

Yang, M

Yi, JY

Lee, HJ

Chang, JH

Kim, HS

Kim, SW

Lee, SC

Honda, Y

Yamaguchi, M

Sawaki, N

机构：

[1] Korea Maritime Univ, Dept Appl Sci, Pusan 606791, South Korea

[2] Andong Natl Univ, Dept Phys, Andong 760749, South Korea

[3] Jeju Natl Univ, Dept Phys, Cheju 690756, South Korea

[4] Nagoya Univ, Dept Elect, Nagoya, Aichi 4648603, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 06期

关键词：

D O I：

10.1002/pssa.200420001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using mixed-source hydride vapor-phase epitaxy (HVPE). an AlGaN layer with high Al content on GaN/Al2O3 substrate is obtained. The AlGaN layer grown by mixed-source HVPE is characterized by X-ray diffraction (XRD) measurements and cathodoluminescence (CL) spectra. In the mixed-source HVPE technique, the AlGaN material is compounded from the chemical reaction between NH3 and an aluminum-gallium chloride formed using HCl that is flowed over metallic Ga mixed with Al. The XRD measurements indicate that single-crystal hexagonal AlGaN with high Al content had been grown. The CL spectra at 4 K show that the distribution of the Al on the AlGaN surface for very high Al content (x = 0.8 in AlxGa1-xN) is not uniform. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1048 / 1052

页数：5

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