Formation of alpha and beta tantalum at the variation of magnetron sputtering conditions

被引:12
|
作者
Nasakina, E. O. [1 ]
Sevostyanov, M. A. [1 ]
Mikhaylova, A. B. [1 ]
Baikin, A. S. [1 ]
Sergienko, K. V. [1 ]
Leonov, A. V. [1 ]
Kolmakov, A. G. [1 ]
机构
[1] Inst Russian Acad Sci, AA Baikov Inst Met & Mat Sci, Leninsky Ave, Moscow, Russia
来源
INTERNATIONAL SCIENTIFIC CONFERENCE ON RADIATION-THERMAL EFFECTS AND PROCESSES IN INORGANIC MATERIALS 2015 (RTEP2015) | 2016年 / 110卷
关键词
composite materials; surface layer; tantalum; alpha and beta phase; nitinol; corrosion resistance; NANOSTRUCTURED ALPHA; NITI ALLOY; FILMS; TEMPERATURE; PARAMETERS; DEPOSITION;
D O I
10.1088/1757-899X/110/1/012042
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nano- and microdimensional surface layers of a and tantalum on flat NiTi, Ti, glass, etc. substrates were created. Structure and composition of samples were defined by SEM, AES and x-ray diffractometry. With increase in deposition time surface layer thickness not linearly increases. The transitional layer provide high adhesion of a surface layer to a substrate. Irrespective of summary sputtering time the beta phase is formed in the beginning and at sputtering time more than 20 min on it alpha tantalum is deposited, while temperature remains below 150 degrees C.
引用
收藏
页数:5
相关论文
共 50 条
  • [21] Biomedical properties of tantalum nitride films synthesized by reactive magnetron sputtering
    Leng, YX
    Sun, H
    Yang, P
    Chen, JY
    Wang, J
    Wan, GJ
    Huang, N
    Tian, XB
    Wang, LP
    Chu, PK
    THIN SOLID FILMS, 2001, 398 : 471 - 475
  • [22] Growth of tantalum boride films by RF magnetron sputtering - Effect of bias
    Lin, ST
    Lee, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (10) : G607 - G611
  • [23] Magnetron Sputtering of Tantalum Oxide Thin Electrolyte Film for Electrochromic Applications
    Liu, Chien-Cheng
    Liu, Kuang-, I
    Lin, Hao-Tung
    Huang, Jow-Lay
    HIGH-PERFORMANCE CERAMICS VII, PTS 1 AND 2, 2012, 512-515 : 1604 - +
  • [24] Low-resistivity indium tantalum oxide films by magnetron sputtering
    Ju, H
    Hwang, S
    Jeong, CO
    Park, SH
    Choi, JG
    Park, C
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (01): : 109 - 111
  • [25] FeZrN films: Role of dc magnetron sputtering conditions in the formation of their elemental and phase compositions
    Sheftel, E. N.
    Tedzhetov, V. A.
    Harin, E., V
    Usmanova, G. Sh
    Dyachkov, A. L.
    THIN SOLID FILMS, 2020, 698
  • [26] Conditions for the formation of cubic boron nitride films by r.f. magnetron sputtering
    Ye, J.
    Rothhaar, U.
    Oechsner, H.
    Surface and Coatings Technology, 1998, 105 (1-2): : 159 - 164
  • [27] Evaluation of cell activation promoted by tantalum and tantalum oxide coatings deposited by reactive DC magnetron sputtering
    Moreira, Hugo
    Costa-Barbosa, Augusto
    Marques, Sandra Mariana
    Sampaio, Paula
    Carvalho, Sandra
    SURFACE & COATINGS TECHNOLOGY, 2017, 330 : 260 - 269
  • [28] Particle contamination formation in magnetron sputtering processes
    Selwyn, GS
    Weiss, CA
    Sequeda, F
    Huang, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (04): : 2023 - 2028
  • [29] Tungsten nanostructure formation in a magnetron sputtering device
    Petty, T. J.
    Bradley, J. W.
    JOURNAL OF NUCLEAR MATERIALS, 2014, 453 (1-3) : 320 - 322
  • [30] Comparative Analysis of the Effect of RF and DC Magnetron Sputtering Parameters on the Structure Formation of Tantalum-Diboride Thin Films
    Goncharov A.A.
    Yunda A.N.
    Bazhin A.I.
    Shelest I.V.
    Buranich V.V.
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2018, 12 (3) : 544 - 548