High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N

被引:44
|
作者
Drury, Daniel [1 ,2 ,3 ]
Yazawa, Keisuke [1 ,2 ]
Zakutayev, Andriy [2 ]
Hanrahan, Brendan [3 ]
Brennecka, Geoff [1 ]
机构
[1] Colorado Sch Mines, 1500 Illinois Ave, Golden, CO 80401 USA
[2] Natl Renewable Energy Lab, 15013 Denver West Pkwy, Golden, CO 80401 USA
[3] US Army, Combat Capabil Dev Command, Res Lab, Adelphi, MD 20783 USA
关键词
AlScN; ferroelectric; high temperature; nonvolatile memory; retention; fatigue; wurtzite; film; sputter deposition; OPERATION;
D O I
10.3390/mi13060887
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures > 200 degrees C. While ferroelectric NVM has previously demonstrated long polarization retention and >10(13) read/write cycles at room temperature, the largest hurdle comes at higher temperatures for conventional perovskite ferroelectrics. Here, we demonstrate how AlScN can enable high-temperature (>200 degrees C) nonvolatile memory. The c-axis textured thin films were prepared via reactive radiofrequency magnetron sputtering onto a highly textured Pt (111) surface. Photolithographically defined Pt top electrodes completed the capacitor stack, which was tested in a high temperature vacuum probe station up to 400 degrees C. Polarization-electric field hysteresis loops between 23 and 400 degrees C reveal minimal changes in the remanent polarization values, while the coercive field decreased from 4.3 MV/cm to 2.6 MV/cm. Even at 400 degrees C, the polarization retention exhibited negligible loss for up to 1000 s, demonstrating promise for potential nonvolatile memory capable of high-temperature operation. Fatigue behavior also showed a moderate dependence on operating temperature, but the mechanisms of degradation require additional study.
引用
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页数:9
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