Enhanced deuterium diffusion in boron doped monocrystalline diamond films using bias-assisted MPCVD

被引：10

作者：

Arnault, J. C. ^{[1
]}

Saada, S. ^{[1
]}

Mer-Calfati, C. ^{[1
]}

Jomard, F. ^{[2
]}

Habka, N. ^{[2
]}

Barjon, J. ^{[2
]}

Chevallier, J. ^{[2
]}

机构：

[1] CEA, LIST, Diamond Sensors Lab, F-91191 Gif Sur Yvette, France

[2] Univ Versailles St Quentin, Grp Etud Matiere Condensee, CNRS, F-92195 Meudon, France

来源：

PHYSICS LETTERS A | 2010年 / 374卷 / 31-32期

关键词：

CHEMICAL VAPOR-DEPOSITION; HYDROGEN DIFFUSION; ION ENERGY; SILICON; NUCLEATION; GROWTH; PLASMA;

D O I：

10.1016/j.physleta.2010.06.009

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The present study well emphasises the role of the bias voltage on the deuterium diffusion in boron doped diamond films ([B] = 2 x 10(19) cm(-3)). A -50 V bias voltage applied between the deuterium microwave plasma and the diamond surface is required to initiate deuterium diffusion. Increasing effective diffusion coefficients are obtained from the SIMS profiles for bias voltages up to -80 V. Then, for bias voltages higher than -120 V, the etching of diamond film becomes dominant. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3254 / 3257

页数：4

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