Nitrogen donor aggregation in 4H-SiC:: g-tensor calculations

被引：17

作者：

Gerstmann, U. ^{[1
]}

Rauls, E. ^{[2
]}

Greulich-Weber, S. ^{[3
]}

Kalabukhova, E. N. ^{[4
]}

Savchenko, D. V. ^{[4
]}

Poeppl, A. ^{[5
]}

Mauri, F.

机构：

[1] Univ Paris 06, Inst Mineral & Phys Milieux Condenses, Campus Boucicaut,140 Rue Lourmel, F-75015 Paris, France

[2] Univ Aarhus, Inst Phys & Astron, DK-8000 Aarhus C, Denmark

[3] Univ Paderborn, Fak Naturwissenschaft, Dept Phys, D-33098 Paderborn, Germany

[4] NASU, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[5] Univ Leipzig, Inst Exptphys 11, Fak Phys & Geowissenschafte, D-04103 Leipzig, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

关键词：

nitrogen; paramagnetic resonance; g-tensors; density functional theory;

D O I：

10.4028/www.scientific.net/MSF.556-557.391

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The microscopic origin of the N-x EPR-lines observed in heavily nitrogen doped 4H-SiC and 6H-SiC is discussed with the help of EPR parameters calculated from first principles. Based on the symmetry of the g-tensors we propose a model with distant N-C donor pairs on inequivalent lattice sites which are coupled to S=1 centers but with nearly vanishing zero-field splittings, giving rise to an essentially S=1/2 like spectrum. The proposed aggregation in neutral donor pairs can contribute to the saturation of the free concentration observed in heavily nitrogen doped SiC.

引用

页码：391 / +

页数：2

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