On the band gap of indium nitride

被引：48

作者：

Nag, BR ^{[1
]}

机构：

[1] Inst Radio Phys & Elect, Kolkata 700009, W Bengal, India

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2003年 / 237卷 / 02期

关键词：

D O I：

10.1002/pssb.200301823

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The controversy about the band gap of indium nitride is discussed. It is shown by considering the electron effective mass in different direct-gap II-VI and III-V semiconducting compounds that the controversy may be resolved by measuring the electron effective mass in indium antimonide samples showing a band gap of 0.7 eV.

引用

页码：R1 / R2

页数：2

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