Structural properties characterization of TiO2 thin films prepared by sol-gel process on Si and Ge based substrates

被引：0

作者：

Xie, Yannan ^{[1
]}

Huang, Huolin ^{[1
]}

Zhang, Feng ^{[1
]}

Wu, Zhengyun ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

来源：

INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年

关键词：

PHOTOCATALYTIC ACTIVITY; TITANIUM-DIOXIDE;

D O I：

10.1109/INEC.2010.5425091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TiO2 films were deposited on different substrates such as SiNx/Si, SiOx/Si, Si and Ge by a sol-gel method. The structural properties of the films were investigated by XRD, SEM and XPS. The results showed that the substrates played a crucial role in the crystalline quality and materials stoichiometry of sol-gel derived TiO2 films. Especially, the film deposited on SiN/Si substrate had a better crystalline quality and materials stoichiometry than other samples because the SiN layer can effectively reduce defects formation resulting from oxygen deficiency.

引用

页码：980 / 981

页数：2

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